دیتاشیت IXTA3N120-TRL

IXT(A,P)3N120

مشخصات دیتاشیت

نام دیتاشیت IXT(A,P)3N120
حجم فایل 179.8 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

دانلود دیتاشیت IXT(A,P)3N120

IXT(A,P)3N120 Datasheet

مشخصات

  • Manufacturer: IXYS
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • detail: N-Channel 1200V 3A (Tc) 200W (Tc) Surface Mount TO-263 (IXTA)

دیتاشیت محصولات مشابه