IXTQ130N10T دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
IXTQ130N10T
|
|
حجم فایل
|
72.536
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
6
|
مشخصات فنی
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Littelfuse/IXYS IXTQ130N10T
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
360W
-
Total Gate Charge (Qg@Vgs):
104nC@10V
-
Drain Source Voltage (Vdss):
100V
-
Input Capacitance (Ciss@Vds):
5080pF@25V
-
Continuous Drain Current (Id):
130A
-
Gate Threshold Voltage (Vgs(th)@Id):
4.5V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
9.1mΩ@10V,25A
-
Package:
TO-3P
-
Manufacturer:
IXYS
-
Series:
TrenchMV™
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
100V
-
Current - Continuous Drain (Id) @ 25°C:
130A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
9.1mOhm @ 25A, 10V
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
104nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
5080pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
360W (Tc)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-3P
-
Package / Case:
TO-3P-3, SC-65-3
-
detail:
N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO-3P
