دیتاشیت IXTQ130N10T
مشخصات دیتاشیت
| نام دیتاشیت | IXT(H,Q)130N10T |
|---|---|
| حجم فایل | 145.768 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 6 |
دانلود دیتاشیت IXT(H,Q)130N10T |
IXT(H,Q)130N10T Datasheet |
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مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Littelfuse/IXYS IXTQ130N10T
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 360W
- Total Gate Charge (Qg@Vgs): 104nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 5080pF@25V
- Continuous Drain Current (Id): 130A
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 9.1mΩ@10V,25A
- Package: TO-3P
- Manufacturer: IXYS
- Series: TrenchMV™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
- detail: N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO-3P
