IXTQ130N10T
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| Manufacturer | IXYS |
| Package | TO-3P-3, SC-65-3 |
| Datasheet | IXT(H,Q)130N10T |
| Description | N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO-3P |
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مشخصات IXTQ130N10T
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Littelfuse/IXYS IXTQ130N10T
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 360W
- Total Gate Charge (Qg@Vgs) 104nC@10V
- Drain Source Voltage (Vdss) 100V
- Input Capacitance (Ciss@Vds) 5080pF@25V
- Continuous Drain Current (Id) 130A
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 9.1mΩ@10V,25A
- Package TO-3P
- Manufacturer IXYS
- Series TrenchMV™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 9.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 104nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 5080pF @ 25V
- FET Feature -
- Power Dissipation (Max) 360W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-3P
- Package / Case TO-3P-3, SC-65-3
- detail N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO-3P
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