دیتاشیت IXFH44N50P
مشخصات دیتاشیت
| نام دیتاشیت | IXF(H,K,T)44N50P |
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| حجم فایل | 150.488 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 6 |
دانلود دیتاشیت IXF(H,K,T)44N50P |
IXF(H,K,T)44N50P Datasheet |
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مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Littelfuse/IXYS IXFH44N50P
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 658W
- Total Gate Charge (Qg@Vgs): 98nC@10V
- Drain Source Voltage (Vdss): 500V
- Input Capacitance (Ciss@Vds): 5440pF@25V
- Continuous Drain Current (Id): 44A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@4mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 140mΩ@22A,10V
- Package: TO-247-3
- Manufacturer: IXYS
- Series: HiPerFET™, PolarHT™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 5440pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 658W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
- detail: N-Channel 500V 44A (Tc) 658W (Tc) Through Hole TO-247AD (IXFH)
