دیتاشیت IXFH50N50P3
مشخصات دیتاشیت
| نام دیتاشیت |
IXFx50N50P3
|
| حجم فایل |
213.712
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Littelfuse/IXYS IXFH50N50P3
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
960W
-
Total Gate Charge (Qg@Vgs):
85nC@10V
-
Drain Source Voltage (Vdss):
500V
-
Input Capacitance (Ciss@Vds):
4335pF@25V
-
Continuous Drain Current (Id):
50A
-
Gate Threshold Voltage (Vgs(th)@Id):
5V@4mA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
120mΩ@25A,10V
-
Package:
TO-247
-
Manufacturer:
IXYS
-
Series:
HiPerFET™, Polar3™
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
500V
-
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
120mOhm @ 25A, 10V
-
Vgs(th) (Max) @ Id:
5V @ 4mA
-
Gate Charge (Qg) (Max) @ Vgs:
85nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
4335pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
960W (Tc)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-247AD (IXFH)
-
Package / Case:
TO-247-3
-
detail:
N-Channel 500V 50A (Tc) 960W (Tc) Through Hole TO-247AD (IXFH)
