IXFH50N50P3
در 0 فروشگاه قیمت هنوز مشخص نشده است
این محصول در حال حاضر فروشنده ای ندارد!
| Manufacturer | IXYS |
| Package | TO-247-3 |
| Datasheet | IXFx50N50P3 |
| Description | N-Channel 500V 50A (Tc) 960W (Tc) Through Hole TO-247AD (IXFH) |
فروشنده های IXFH50N50P3
فروشگاهی یافت نشد
تغییرات قیمت
مشخصات IXFH50N50P3
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Littelfuse/IXYS IXFH50N50P3
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 960W
- Total Gate Charge (Qg@Vgs) 85nC@10V
- Drain Source Voltage (Vdss) 500V
- Input Capacitance (Ciss@Vds) 4335pF@25V
- Continuous Drain Current (Id) 50A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@4mA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 120mΩ@25A,10V
- Package TO-247
- Manufacturer IXYS
- Series HiPerFET™, Polar3™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 500V
- Current - Continuous Drain (Id) @ 25°C 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 120mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 4335pF @ 25V
- FET Feature -
- Power Dissipation (Max) 960W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-247AD (IXFH)
- Package / Case TO-247-3
- detail N-Channel 500V 50A (Tc) 960W (Tc) Through Hole TO-247AD (IXFH)
فروشنده های IXFH50N50P3
فروشگاهی یافت نشد