IXXH40N65B4H1 دیتاشیت

IXXH40N65B4H1

مشخصات دیتاشیت

نام دیتاشیت IXXH40N65B4H1
حجم فایل 185.873 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

مشاهده دیتاشیت IXXH40N65B4H1

دانلود دیتاشیت

سایر مستندات

IXXH40N65B4H1 9 pages

مشخصات فنی

  • RoHS: true
  • Type: PT
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Collector Current (Ic): 120A
  • Power Dissipation (Pd): 455W
  • Turn?on Delay Time (Td(on)): 28ns
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 1.4mJ
  • Total Gate Charge (Qg@Ic,Vge): 77nC
  • Turn?off Delay Time (Td(off)): 144ns
  • Pulsed Collector Current (Icm): 240A
  • Turn?off Switching Loss (Eoff): 0.56mJ
  • Diode Reverse Recovery Time (Trr): 120ns
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,40A
  • Package: TO-247
  • Manufacturer: IXYS
  • Series: GenX4™, XPT™
  • Packaging: Tube
  • Part Status: Active
  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 455W
  • Switching Energy: 1.4mJ (on), 560µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 28ns/144ns
  • Test Condition: 400V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 120ns
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • detail: IGBT PT 650V 120A 455W Through Hole TO-247AD

محصولات مشابه