IXXH40N65B4H1

IXXH40N65B4H1

IXXH40N65B4H1

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مشخصات فنی:
Manufacturer IXYS
Package TO-247-3
Datasheet IXXH40N65B4H1
Description IGBT PT 650V 120A 455W Through Hole TO-247AD

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مشخصات

  • RoHS true
  • Type PT
  • Category Triode/MOS Tube/Transistor/IGBTs
  • Operating Temperature -55°C~+175°C@(Tj)
  • Collector Current (Ic) 120A
  • Power Dissipation (Pd) 455W
  • Turn?on Delay Time (Td(on)) 28ns
  • Input Capacitance (Cies@Vce) -
  • Turn?on Switching Loss (Eon) 1.4mJ
  • Total Gate Charge (Qg@Ic,Vge) 77nC
  • Turn?off Delay Time (Td(off)) 144ns
  • Pulsed Collector Current (Icm) 240A
  • Turn?off Switching Loss (Eoff) 0.56mJ
  • Diode Reverse Recovery Time (Trr) 120ns
  • Collector-Emitter Breakdown Voltage (Vces) 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic) 2V@15V,40A
  • Package TO-247
  • Manufacturer IXYS
  • Series GenX4™, XPT™
  • Packaging Tube
  • Part Status Active
  • IGBT Type PT
  • Voltage - Collector Emitter Breakdown (Max) 650V
  • Current - Collector (Ic) (Max) 120A
  • Current - Collector Pulsed (Icm) 240A
  • Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
  • Power - Max 455W
  • Switching Energy 1.4mJ (on), 560µJ (off)
  • Input Type Standard
  • Gate Charge 77nC
  • Td (on/off) @ 25°C 28ns/144ns
  • Test Condition 400V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr) 120ns
  • Mounting Type Through Hole
  • Package / Case TO-247-3
  • Supplier Device Package TO-247AD
  • detail IGBT PT 650V 120A 455W Through Hole TO-247AD

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