دیتاشیت STP80NF55-06

ST(B,P)80NF55-06(-1,FP)

مشخصات دیتاشیت

نام دیتاشیت ST(B,P)80NF55-06(-1,FP)
حجم فایل 447.712 کیلوبایت
نوع فایل pdf
تعداد صفحات 17

دانلود دیتاشیت ST(B,P)80NF55-06(-1,FP)

ST(B,P)80NF55-06(-1,FP) Datasheet

مشخصات

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP80NF55-06
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 300W
  • Total Gate Charge (Qg@Vgs): 189nC@10V
  • Drain Source Voltage (Vdss): 55V
  • Input Capacitance (Ciss@Vds): 4400pF@25V
  • Continuous Drain Current (Id): 80A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.5mΩ@10V,40A
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: STripFET™ II
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
  • Base Part Number: STP80N
  • detail: N-Channel 55V 80A (Tc) 300W (Tc) Through Hole TO-220AB

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