STP80NF55-06
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| Manufacturer | STMicroelectronics |
| Package | TO-220-3 |
| Datasheet | ST(B,P)80NF55-06(-1,FP) |
| Description | N-Channel 55V 80A (Tc) 300W (Tc) Through Hole TO-220AB |
فروشنده های STP80NF55-06
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مشخصات STP80NF55-06
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STP80NF55-06
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 300W
- Total Gate Charge (Qg@Vgs) 189nC@10V
- Drain Source Voltage (Vdss) 55V
- Input Capacitance (Ciss@Vds) 4400pF@25V
- Continuous Drain Current (Id) 80A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 6.5mΩ@10V,40A
- Package TO-220
- Manufacturer STMicroelectronics
- Series STripFET™ II
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 55V
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 6.5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 189nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V
- FET Feature -
- Power Dissipation (Max) 300W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Base Part Number STP80N
- detail N-Channel 55V 80A (Tc) 300W (Tc) Through Hole TO-220AB
فروشنده های STP80NF55-06
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