SCT20N120 دیتاشیت

SCT20N120

مشخصات دیتاشیت

نام دیتاشیت SCT20N120
حجم فایل 69.454 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

مشاهده دیتاشیت SCT20N120

دانلود دیتاشیت

سایر مستندات

SCT20N120 13 pages

Fine Tune SIC MOSFET Gate Driver 17 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics SCT20N120
  • Operating Temperature: -55°C~+200°C@(Tj)
  • Power Dissipation (Pd): 175W
  • Total Gate Charge (Qg@Vgs): 45nC@20V
  • Drain Source Voltage (Vdss): 1.2kV
  • Input Capacitance (Ciss@Vds): 650pF@400V
  • Continuous Drain Current (Id): 20A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@1mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 290mΩ@20V,10A
  • Package: HiP-247
  • Manufacturer: STMicroelectronics
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 20V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 20V
  • Vgs (Max): +25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 400V
  • FET Feature: -
  • Power Dissipation (Max): 175W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: HiP247™
  • Package / Case: TO-247-3
  • Base Part Number: SCT20
  • detail: N-Channel 1200V 20A (Tc) 175W (Tc) Through Hole HiP247™

محصولات مشابه