دیتاشیت CSD25402Q3A
مشخصات دیتاشیت
| نام دیتاشیت |
CSD25402Q3A
|
| حجم فایل |
1086.989
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
15
|
مشخصات
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Texas Instruments CSD25402Q3A
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Power Dissipation (Pd):
2.8W
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Drain Source Voltage (Vdss):
20V
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Continuous Drain Current (Id):
76A
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Gate Threshold Voltage (Vgs(th)@Id):
1.15V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
8.9mΩ@4.5V,10A
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Package:
VSONP-8(3.1x3.1)
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Manufacturer:
Texas Instruments
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Power Dissipation (Max):
2.8W (Ta), 69W (Tc)
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Input Capacitance (Ciss) (Max) @ Vds:
1790pF @ 10V
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Vgs (Max):
±12V
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Supplier Device Package:
8-VSON (3.3x3.3)
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Packaging:
Cut Tape (CT)
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Mounting Type:
Surface Mount
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Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
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Base Part Number:
CSD2540
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Vgs(th) (Max) @ Id:
1.15V @ 250µA
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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FET Feature:
-
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Package / Case:
8-PowerVDFN
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Part Status:
Active
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Series:
NexFET™
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Gate Charge (Qg) (Max) @ Vgs:
9.7nC @ 4.5V
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Rds On (Max) @ Id, Vgs:
8.9mOhm @ 10A, 4.5V
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Current - Continuous Drain (Id) @ 25°C:
76A (Tc)
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Drain to Source Voltage (Vdss):
20V
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detail:
P-Channel 20V 76A (Tc) 2.8W (Ta), 69W (Tc) Surface Mount 8-VSON (3.3x3.3)
