CSD17573Q5B Datasheet دیتاشیت

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مشاهده دیتاشیت CSD17573Q5B Datasheet	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD17573Q5B
Power Dissipation (Pd): 3.2W
Drain Source Voltage (Vdss): 30V
Continuous Drain Current (Id): 100A
Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 1mΩ@10V,35A
Package: DFN-8(5x6)
Manufacturer: Texas Instruments
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Series: NexFET™
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 4.5V
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 1mOhm @ 35A, 10V
Supplier Device Package: 8-VSON-CLIP (5x6)
Vgs (Max): ±20V
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Packaging: Cut Tape (CT)
Power Dissipation (Max): 3.2W (Ta), 195W (Tc)
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Base Part Number: CSD17573
FET Type: N-Channel
Package / Case: 8-PowerTDFN
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 15V
Part Status: Active
detail: N-Channel 30V 100A (Ta) 3.2W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6)