دیتاشیت STN1NK60Z
مشخصات دیتاشیت
| نام دیتاشیت | STN1NK60Z, STQ1NK60ZR Datasheet |
|---|---|
| حجم فایل | 1027.313 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 18 |
دانلود دیتاشیت STN1NK60Z, STQ1NK60ZR Datasheet |
STN1NK60Z, STQ1NK60ZR Datasheet Datasheet |
|---|
مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STN1NK60Z
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 3.3W
- Total Gate Charge (Qg@Vgs): 6.9nC@10V
- Input Capacitance (Ciss@Vds): 94pF@25V
- Continuous Drain Current (Id): 300mA
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@50uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 15Ω@400mA,10V
- Package: SOT-223
- Manufacturer: STMicroelectronics
- Series: SuperMESH™
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 15Ohm @ 400mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
- Base Part Number: STN1N
- detail: N-Channel 600V 300mA (Tc) 3.3W (Tc) Surface Mount SOT-223
