STQ1NK60ZR-AP
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| Manufacturer | STMicroelectronics |
| Package | TO-226-3, TO-92-3 (TO-226AA) |
| Datasheet | STN1NK60Z, STQ1NK60ZR Datasheet |
| Description | N-Channel 600V 300mA (Tc) 3W (Tc) Through Hole TO-92-3 |
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مشخصات STQ1NK60ZR-AP
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STQ1NK60ZR-AP
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 3W
- Total Gate Charge (Qg@Vgs) 6.9nC@10V
- Drain Source Voltage (Vdss) 600V
- Input Capacitance (Ciss@Vds) 94pF@25V
- Continuous Drain Current (Id) 300mA
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@50uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 15Ω@10V,400mA
- Package TO-92
- Manufacturer STMicroelectronics
- Series SuperMESH™
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 300mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 15Ohm @ 400mA, 10V
- Vgs(th) (Max) @ Id 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 94pF @ 25V
- FET Feature -
- Power Dissipation (Max) 3W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-92-3
- Package / Case TO-226-3, TO-92-3 (TO-226AA)
- Base Part Number STQ1
- detail N-Channel 600V 300mA (Tc) 3W (Tc) Through Hole TO-92-3
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