ST(P,W)10NK80Z(FP) دیتاشیت

ST(P,W)10NK80Z(FP)

مشخصات دیتاشیت

نام دیتاشیت ST(P,W)10NK80Z(FP)
حجم فایل 450.3 کیلوبایت
نوع فایل pdf
تعداد صفحات 17

دانلود دیتاشیت ST(P,W)10NK80Z(FP)

دانلود دیتاشیت

سایر مستندات

STP10NK80ZFP 17 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STW10NK80Z
  • Power Dissipation (Pd): 160W
  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 9A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@100uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 900mΩ@10V,4.5A
  • Package: TO-247
  • Manufacturer: STMicroelectronics
  • Series: SuperMESH™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
  • Base Part Number: STW10N
  • detail: N-Channel 800V 9A (Tc) 160W (Tc) Through Hole TO-247-3

محصولات مشابه