STW10NK80Z
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| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Datasheet | ST(P,W)10NK80Z(FP) |
| Description | N-Channel 800V 9A (Tc) 160W (Tc) Through Hole TO-247-3 |
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Specifications STW10NK80Z
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STW10NK80Z
- Power Dissipation (Pd) 160W
- Drain Source Voltage (Vdss) 800V
- Continuous Drain Current (Id) 9A
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@100uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 900mΩ@10V,4.5A
- Package TO-247
- Manufacturer STMicroelectronics
- Series SuperMESH™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 800V
- Current - Continuous Drain (Id) @ 25°C 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 900mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 25V
- FET Feature -
- Power Dissipation (Max) 160W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247-3
- Package / Case TO-247-3
- Base Part Number STW10N
- detail N-Channel 800V 9A (Tc) 160W (Tc) Through Hole TO-247-3
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