STGD4M65DF2 دیتاشیت

STGD4M65DF2

مشخصات دیتاشیت

نام دیتاشیت STGD4M65DF2
حجم فایل 56.89 کیلوبایت
نوع فایل pdf
تعداد صفحات 19

مشاهده دیتاشیت STGD4M65DF2

دانلود دیتاشیت

سایر مستندات

STGD4M65DF2 Datasheet 20 pages

مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: STMicroelectronics STGD4M65DF2
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Collector Current (Ic): 8A
  • Power Dissipation (Pd): 68W
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 0.04mJ
  • Pulsed Collector Current (Icm): 16A
  • Turn?off Switching Loss (Eoff): 0.136mJ
  • Diode Reverse Recovery Time (Trr): 133ns
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): -
  • Package: TO-252-2(DPAK)
  • Manufacturer: STMicroelectronics
  • Series: M
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 16A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 68W
  • Switching Energy: 40µJ (on), 136µJ (off)
  • Input Type: Standard
  • Gate Charge: 15.2nC
  • Td (on/off) @ 25°C: 12ns/86ns
  • Test Condition: 400V, 4A, 47Ohm, 15V
  • Reverse Recovery Time (trr): 133ns
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Base Part Number: STGD4
  • detail: IGBT Trench Field Stop 650V 8A 68W Surface Mount DPAK

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