STGD4M65DF2

STGD4M65DF2

STGD4M65DF2

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مشخصات فنی:
Manufacturer STMicroelectronics
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet STGD4M65DF2 Datasheet
Description IGBT Trench Field Stop 650V 8A 68W Surface Mount DPAK

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مشخصات

  • RoHS true
  • Type Trench Field Stop
  • Category Triode/MOS Tube/Transistor/IGBTs
  • Datasheet STMicroelectronics STGD4M65DF2
  • Operating Temperature -55°C~+175°C@(Tj)
  • Collector Current (Ic) 8A
  • Power Dissipation (Pd) 68W
  • Input Capacitance (Cies@Vce) -
  • Turn?on Switching Loss (Eon) 0.04mJ
  • Pulsed Collector Current (Icm) 16A
  • Turn?off Switching Loss (Eoff) 0.136mJ
  • Diode Reverse Recovery Time (Trr) 133ns
  • Collector-Emitter Breakdown Voltage (Vces) 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic) -
  • Package TO-252-2(DPAK)
  • Manufacturer STMicroelectronics
  • Series M
  • Packaging Cut Tape (CT)
  • Part Status Active
  • IGBT Type Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max) 650V
  • Current - Collector (Ic) (Max) 8A
  • Current - Collector Pulsed (Icm) 16A
  • Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A
  • Power - Max 68W
  • Switching Energy 40µJ (on), 136µJ (off)
  • Input Type Standard
  • Gate Charge 15.2nC
  • Td (on/off) @ 25°C 12ns/86ns
  • Test Condition 400V, 4A, 47Ohm, 15V
  • Reverse Recovery Time (trr) 133ns
  • Mounting Type Surface Mount
  • Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package DPAK
  • Base Part Number STGD4
  • detail IGBT Trench Field Stop 650V 8A 68W Surface Mount DPAK

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