STGD4M65DF2 Datasheet دیتاشیت

STGD4M65DF2 Datasheet

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نام دیتاشیت STGD4M65DF2 Datasheet
حجم فایل 454.376 کیلوبایت
نوع فایل pdf
تعداد صفحات 20

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سایر مستندات

STGD4M65DF2 19 pages

مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: STMicroelectronics STGD4M65DF2
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Collector Current (Ic): 8A
  • Power Dissipation (Pd): 68W
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 0.04mJ
  • Pulsed Collector Current (Icm): 16A
  • Turn?off Switching Loss (Eoff): 0.136mJ
  • Diode Reverse Recovery Time (Trr): 133ns
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): -
  • Package: TO-252-2(DPAK)
  • Manufacturer: STMicroelectronics
  • Series: M
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 16A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 68W
  • Switching Energy: 40µJ (on), 136µJ (off)
  • Input Type: Standard
  • Gate Charge: 15.2nC
  • Td (on/off) @ 25°C: 12ns/86ns
  • Test Condition: 400V, 4A, 47Ohm, 15V
  • Reverse Recovery Time (trr): 133ns
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Base Part Number: STGD4
  • detail: IGBT Trench Field Stop 650V 8A 68W Surface Mount DPAK

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