دیتاشیت MJD122-1

مشخصات دیتاشیت

دانلود دیتاشیت MJD122(T4,-1), MJD127(T4,-1)	MJD122(T4,-1), MJD127(T4,-1) Datasheet

Manufacturer: STMicroelectronics
Series: -
Packaging: Bulk
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Power - Max: 20W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251-3
Base Part Number: MJD122
detail: Bipolar (BJT) Transistor NPN - Darlington 100V 8A 20W Through Hole TO-251-3