MJD122-1
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| Manufacturer | STMicroelectronics |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Datasheet | MJD122(T4,-1), MJD127(T4,-1) |
| Description | Bipolar (BJT) Transistor NPN - Darlington 100V 8A 20W Through Hole TO-251-3 |
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مشخصات MJD122-1
- Manufacturer STMicroelectronics
- Series -
- Packaging Bulk
- Part Status Active
- Transistor Type NPN - Darlington
- Current - Collector (Ic) (Max) 8A
- Voltage - Collector Emitter Breakdown (Max) 100V
- Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
- Current - Collector Cutoff (Max) 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V
- Power - Max 20W
- Frequency - Transition -
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package TO-251-3
- Base Part Number MJD122
- detail Bipolar (BJT) Transistor NPN - Darlington 100V 8A 20W Through Hole TO-251-3
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