- صفحه اصلی
- دانلود دیتاشیت
- دیتاشیت STD100N10F7
STD100N10F7 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | STD100N10F7 |
|---|---|
| حجم فایل | 55.466 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 28 |
دانلود دیتاشیت STD100N10F7 |
دانلود دیتاشیت |
|---|
سایر مستندات
STx100N10F7 DataSheet 28 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STD100N10F7
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 120W
- Total Gate Charge (Qg@Vgs): 61nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 4369pF@50V
- Continuous Drain Current (Id): 80A
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@10V,40A
- Package: TO-252
- Manufacturer: STMicroelectronics
- Series: DeepGATE™, STripFET™ VII
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4369pF @ 50V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number: STD10
- detail: N-Channel 100V 80A (Tc) 120W (Tc) Surface Mount DPAK