STD100N10F7
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| Manufacturer | STMicroelectronics |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | STx100N10F7 DataSheet |
| Description | N-Channel 100V 80A (Tc) 120W (Tc) Surface Mount DPAK |
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تغییرات قیمت
مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STD100N10F7
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 120W
- Total Gate Charge (Qg@Vgs) 61nC@10V
- Drain Source Voltage (Vdss) 100V
- Input Capacitance (Ciss@Vds) 4369pF@50V
- Continuous Drain Current (Id) 80A
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 8mΩ@10V,40A
- Package TO-252
- Manufacturer STMicroelectronics
- Series DeepGATE™, STripFET™ VII
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 4369pF @ 50V
- FET Feature -
- Power Dissipation (Max) 120W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package DPAK
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number STD10
- detail N-Channel 100V 80A (Tc) 120W (Tc) Surface Mount DPAK
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