- صفحه اصلی
- دانلود دیتاشیت
- دیتاشیت STP33N60DM2
STP33N60DM2 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | STP33N60DM2 |
|---|---|
| حجم فایل | 71.494 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 20 |
دانلود دیتاشیت STP33N60DM2 |
دانلود دیتاشیت |
|---|
سایر مستندات
ST(B,P,W)33N60DM2 20 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STP33N60DM2
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 190W
- Total Gate Charge (Qg@Vgs): 43nC@10V
- Input Capacitance (Ciss@Vds): 1870pF@100V
- Continuous Drain Current (Id): 24A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 130mΩ@12A,10V
- Package: TO-220
- Manufacturer: STMicroelectronics
- Series: MDmesh™ DM2
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
- Base Part Number: STP33N
- detail: N-Channel 600V 24A (Tc) 190W (Tc) Through Hole TO-220