STP33N60DM2
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| Manufacturer | STMicroelectronics |
| Package | TO-220-3 |
| Datasheet | ST(B,P,W)33N60DM2 |
| Description | N-Channel 600V 24A (Tc) 190W (Tc) Through Hole TO-220 |
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تغییرات قیمت
مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STP33N60DM2
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 190W
- Total Gate Charge (Qg@Vgs) 43nC@10V
- Input Capacitance (Ciss@Vds) 1870pF@100V
- Continuous Drain Current (Id) 24A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 130mΩ@12A,10V
- Package TO-220
- Manufacturer STMicroelectronics
- Series MDmesh™ DM2
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 130mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 1870pF @ 100V
- FET Feature -
- Power Dissipation (Max) 190W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-220
- Package / Case TO-220-3
- Base Part Number STP33N
- detail N-Channel 600V 24A (Tc) 190W (Tc) Through Hole TO-220
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