STB32NM50N دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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STB32NM50N
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حجم فایل
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69.944
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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21
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STB32NM50N
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Power Dissipation (Pd):
190W
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Total Gate Charge (Qg@Vgs):
62.5nC@10V
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Drain Source Voltage (Vdss):
500V
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Input Capacitance (Ciss@Vds):
1973pF@50V
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Continuous Drain Current (Id):
22A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
130mΩ@11A,10V
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Package:
D2PK
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Manufacturer:
STMicroelectronics
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Series:
MDmesh™ II
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
500V
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Current - Continuous Drain (Id) @ 25°C:
22A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
130mOhm @ 11A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
62.5nC @ 10V
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Vgs (Max):
±25V
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Input Capacitance (Ciss) (Max) @ Vds:
1973pF @ 50V
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FET Feature:
-
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Power Dissipation (Max):
190W (Tc)
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
TO-263 (D²Pak)
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Part Number:
STB32N
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detail:
N-Channel 500V 22A (Tc) 190W (Tc) Surface Mount TO-263 (D²Pak)
