STB32NM50N
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| Manufacturer | STMicroelectronics |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | STx32NM50N |
| Description | N-Channel 500V 22A (Tc) 190W (Tc) Surface Mount TO-263 (D²Pak) |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STB32NM50N
- Power Dissipation (Pd) 190W
- Total Gate Charge (Qg@Vgs) 62.5nC@10V
- Drain Source Voltage (Vdss) 500V
- Input Capacitance (Ciss@Vds) 1973pF@50V
- Continuous Drain Current (Id) 22A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 130mΩ@11A,10V
- Package D2PK
- Manufacturer STMicroelectronics
- Series MDmesh™ II
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 500V
- Current - Continuous Drain (Id) @ 25°C 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 130mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 62.5nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 1973pF @ 50V
- FET Feature -
- Power Dissipation (Max) 190W (Tc)
- Operating Temperature 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package TO-263 (D²Pak)
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number STB32N
- detail N-Channel 500V 22A (Tc) 190W (Tc) Surface Mount TO-263 (D²Pak)
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