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- دیتاشیت STW40N60M2
STW40N60M2 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | STW40N60M2 |
|---|---|
| حجم فایل | 64.126 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 21 |
دانلود دیتاشیت STW40N60M2 |
دانلود دیتاشیت |
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سایر مستندات
STx40N60M2 21 pages
STW40N60M2 21 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STW40N60M2
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 250W
- Total Gate Charge (Qg@Vgs): 57nC@10V
- Drain Source Voltage (Vdss): 600V
- Input Capacitance (Ciss@Vds): 2500pF@100V
- Continuous Drain Current (Id): 34A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 88mΩ@10V,17A
- Package: TO-247
- Manufacturer: STMicroelectronics
- Series: MDmesh™ II Plus
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
- Base Part Number: STW40N
- detail: N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-247
