STW40N60M2
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| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Datasheet | STx40N60M2 |
| Description | N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-247 |
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تغییرات قیمت
مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STW40N60M2
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 250W
- Total Gate Charge (Qg@Vgs) 57nC@10V
- Drain Source Voltage (Vdss) 600V
- Input Capacitance (Ciss@Vds) 2500pF@100V
- Continuous Drain Current (Id) 34A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 88mΩ@10V,17A
- Package TO-247
- Manufacturer STMicroelectronics
- Series MDmesh™ II Plus
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 88mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 100V
- FET Feature -
- Power Dissipation (Max) 250W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-247
- Package / Case TO-247-3
- Base Part Number STW40N
- detail N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-247
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