دیتاشیت STP42N65M5
مشخصات دیتاشیت
| نام دیتاشیت |
STx42N65M5
|
| حجم فایل |
1013.478
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
25
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
STMicroelectronics STP42N65M5
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
190W
-
Total Gate Charge (Qg@Vgs):
98nC@0~10V
-
Drain Source Voltage (Vdss):
650V
-
Input Capacitance (Ciss@Vds):
4.65nF@100V
-
Continuous Drain Current (Id):
33A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
3.2pF@100V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
70mΩ@10V,16.5A
-
Package:
TO-220
-
Manufacturer:
STMicroelectronics
-
Series:
MDmesh™ V
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
650V
-
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
79mOhm @ 16.5A, 10V
-
Vgs(th) (Max) @ Id:
5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
100nC @ 10V
-
Vgs (Max):
±25V
-
Input Capacitance (Ciss) (Max) @ Vds:
4650pF @ 100V
-
FET Feature:
-
-
Power Dissipation (Max):
190W (Tc)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-220-3
-
Package / Case:
TO-220-3
-
Base Part Number:
STP42N
-
detail:
N-Channel 650V 33A (Tc) 190W (Tc) Through Hole TO-220-3
