STN1NK60Z, STQ1NK60ZR Datasheet دیتاشیت

STN1NK60Z, STQ1NK60ZR Datasheet

مشخصات دیتاشیت

نام دیتاشیت STN1NK60Z, STQ1NK60ZR Datasheet
حجم فایل 1027.313 کیلوبایت
نوع فایل pdf
تعداد صفحات 18

دانلود دیتاشیت STN1NK60Z, STQ1NK60ZR Datasheet

دانلود دیتاشیت

سایر مستندات

STN1NK60Z 18 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STQ1NK60ZR-AP
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 3W
  • Total Gate Charge (Qg@Vgs): 6.9nC@10V
  • Drain Source Voltage (Vdss): 600V
  • Input Capacitance (Ciss@Vds): 94pF@25V
  • Continuous Drain Current (Id): 300mA
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@50uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 15Ω@10V,400mA
  • Package: TO-92
  • Manufacturer: STMicroelectronics
  • Series: SuperMESH™
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 15Ohm @ 400mA, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Base Part Number: STQ1
  • detail: N-Channel 600V 300mA (Tc) 3W (Tc) Through Hole TO-92-3

محصولات مشابه