دیتاشیت CSD13202Q2
مشخصات دیتاشیت
| نام دیتاشیت |
CSD13202Q2
|
| حجم فایل |
854.101
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
12
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Texas Instruments CSD13202Q2
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Power Dissipation (Pd):
2.7W
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Drain Source Voltage (Vdss):
12V
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Continuous Drain Current (Id):
22A
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Gate Threshold Voltage (Vgs(th)@Id):
1.1V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
9.3mΩ@4.5V,5A
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Package:
SON-8(2x2)
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Manufacturer:
Texas Instruments
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Power Dissipation (Max):
2.7W (Ta)
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Drain to Source Voltage (Vdss):
12V
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Rds On (Max) @ Id, Vgs:
9.3mOhm @ 5A, 4.5V
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Vgs (Max):
±8V
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FET Type:
N-Channel
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Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
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Technology:
MOSFET (Metal Oxide)
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Current - Continuous Drain (Id) @ 25°C:
22A (Ta)
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FET Feature:
-
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Input Capacitance (Ciss) (Max) @ Vds:
997pF @ 6V
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Packaging:
Cut Tape (CT)
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Package / Case:
6-VDFN Exposed Pad
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Part Status:
Active
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Series:
NexFET™
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Vgs(th) (Max) @ Id:
1.1V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
6.6nC @ 4.5V
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Supplier Device Package:
6-WSON (2x2)
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Mounting Type:
Surface Mount
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Base Part Number:
CSD132
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detail:
N-Channel 12V 22A (Ta) 2.7W (Ta) Surface Mount 6-WSON (2x2)
