CSD13202Q2
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| Manufacturer | Texas Instruments |
| Package | 6-VDFN Exposed Pad |
| Datasheet | CSD13202Q2 |
| Description | N-Channel 12V 22A (Ta) 2.7W (Ta) Surface Mount 6-WSON (2x2) |
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مشخصات CSD13202Q2
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Texas Instruments CSD13202Q2
- Power Dissipation (Pd) 2.7W
- Drain Source Voltage (Vdss) 12V
- Continuous Drain Current (Id) 22A
- Gate Threshold Voltage (Vgs(th)@Id) 1.1V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 9.3mΩ@4.5V,5A
- Package SON-8(2x2)
- Manufacturer Texas Instruments
- Power Dissipation (Max) 2.7W (Ta)
- Drain to Source Voltage (Vdss) 12V
- Rds On (Max) @ Id, Vgs 9.3mOhm @ 5A, 4.5V
- Vgs (Max) ±8V
- FET Type N-Channel
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Technology MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C 22A (Ta)
- FET Feature -
- Input Capacitance (Ciss) (Max) @ Vds 997pF @ 6V
- Operating Temperature -55°C ~ 150°C (TJ)
- Packaging Cut Tape (CT)
- Package / Case 6-VDFN Exposed Pad
- Part Status Active
- Series NexFET™
- Vgs(th) (Max) @ Id 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 4.5V
- Supplier Device Package 6-WSON (2x2)
- Mounting Type Surface Mount
- Base Part Number CSD132
- detail N-Channel 12V 22A (Ta) 2.7W (Ta) Surface Mount 6-WSON (2x2)
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