CSD85312Q3E دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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CSD85312Q3E
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حجم فایل
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86.05
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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13
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مشخصات فنی
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RoHS:
true
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Type:
2PCSNChannel(Common Drain)
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Texas Instruments CSD85312Q3E
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
2.5W
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Total Gate Charge (Qg@Vgs):
15.2nC@4.5V
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Drain Source Voltage (Vdss):
20V
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Input Capacitance (Ciss@Vds):
2390pF@10V
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Continuous Drain Current (Id):
39A
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Gate Threshold Voltage (Vgs(th)@Id):
1.4V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
12.4mΩ@8V,10A
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Package:
VSON-8(3.3x3.3)
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Manufacturer:
Texas Instruments
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Drain to Source Voltage (Vdss):
20V
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Power - Max:
2.5W
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Rds On (Max) @ Id, Vgs:
12.4mOhm @ 10A, 8V
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FET Type:
2 N-Channel (Dual) Common Source
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Part Status:
Active
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Current - Continuous Drain (Id) @ 25°C:
39A
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FET Feature:
Logic Level Gate, 5V Drive
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Input Capacitance (Ciss) (Max) @ Vds:
2390pF @ 10V
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Packaging:
Cut Tape (CT)
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Package / Case:
8-PowerVDFN
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Series:
NexFET™
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Vgs(th) (Max) @ Id:
1.4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
15.2nC @ 4.5V
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Supplier Device Package:
8-VSON (3.3x3.3)
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Mounting Type:
Surface Mount
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Base Part Number:
CSD853
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detail:
Mosfet Array 2 N-Channel (Dual) Common Source 20V 39A 2.5W Surface Mount 8-VSON (3.3x3.3)
