CSD85312Q3E

CSD85312Q3E

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Manufacturer Texas Instruments
Package 8-PowerVDFN
Datasheet CSD85312Q3E
Description Mosfet Array 2 N-Channel (Dual) Common Source 20V 39A 2.5W Surface Mount 8-VSON (3.3x3.3)

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مشخصات

  • RoHS true
  • Type 2PCSNChannel(Common Drain)
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet Texas Instruments CSD85312Q3E
  • Operating Temperature -55°C~+150°C@(Tj)
  • Power Dissipation (Pd) 2.5W
  • Total Gate Charge (Qg@Vgs) 15.2nC@4.5V
  • Drain Source Voltage (Vdss) 20V
  • Input Capacitance (Ciss@Vds) 2390pF@10V
  • Continuous Drain Current (Id) 39A
  • Gate Threshold Voltage (Vgs(th)@Id) 1.4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 12.4mΩ@8V,10A
  • Package VSON-8(3.3x3.3)
  • Manufacturer Texas Instruments
  • Drain to Source Voltage (Vdss) 20V
  • Power - Max 2.5W
  • Rds On (Max) @ Id, Vgs 12.4mOhm @ 10A, 8V
  • FET Type 2 N-Channel (Dual) Common Source
  • Part Status Active
  • Current - Continuous Drain (Id) @ 25°C 39A
  • FET Feature Logic Level Gate, 5V Drive
  • Input Capacitance (Ciss) (Max) @ Vds 2390pF @ 10V
  • Packaging Cut Tape (CT)
  • Package / Case 8-PowerVDFN
  • Series NexFET™
  • Vgs(th) (Max) @ Id 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 15.2nC @ 4.5V
  • Supplier Device Package 8-VSON (3.3x3.3)
  • Mounting Type Surface Mount
  • Base Part Number CSD853
  • detail Mosfet Array 2 N-Channel (Dual) Common Source 20V 39A 2.5W Surface Mount 8-VSON (3.3x3.3)

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