CSD85312Q3E
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| Manufacturer | Texas Instruments |
| Package | 8-PowerVDFN |
| Datasheet | CSD85312Q3E |
| Description | Mosfet Array 2 N-Channel (Dual) Common Source 20V 39A 2.5W Surface Mount 8-VSON (3.3x3.3) |
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مشخصات
- RoHS true
- Type 2PCSNChannel(Common Drain)
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Texas Instruments CSD85312Q3E
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 2.5W
- Total Gate Charge (Qg@Vgs) 15.2nC@4.5V
- Drain Source Voltage (Vdss) 20V
- Input Capacitance (Ciss@Vds) 2390pF@10V
- Continuous Drain Current (Id) 39A
- Gate Threshold Voltage (Vgs(th)@Id) 1.4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 12.4mΩ@8V,10A
- Package VSON-8(3.3x3.3)
- Manufacturer Texas Instruments
- Drain to Source Voltage (Vdss) 20V
- Power - Max 2.5W
- Rds On (Max) @ Id, Vgs 12.4mOhm @ 10A, 8V
- FET Type 2 N-Channel (Dual) Common Source
- Part Status Active
- Current - Continuous Drain (Id) @ 25°C 39A
- FET Feature Logic Level Gate, 5V Drive
- Input Capacitance (Ciss) (Max) @ Vds 2390pF @ 10V
- Packaging Cut Tape (CT)
- Package / Case 8-PowerVDFN
- Series NexFET™
- Vgs(th) (Max) @ Id 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 15.2nC @ 4.5V
- Supplier Device Package 8-VSON (3.3x3.3)
- Mounting Type Surface Mount
- Base Part Number CSD853
- detail Mosfet Array 2 N-Channel (Dual) Common Source 20V 39A 2.5W Surface Mount 8-VSON (3.3x3.3)
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