- صفحه اصلی
- دانلود دیتاشیت
- دیتاشیت STD6N80K5
STD6N80K5 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | STD6N80K5 |
|---|---|
| حجم فایل | 67.256 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 26 |
دانلود دیتاشیت STD6N80K5 |
دانلود دیتاشیت |
|---|
سایر مستندات
ST(B,D,I,P)6N80K5 26 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STD6N80K5
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 85W
- Total Gate Charge (Qg@Vgs): 7.5nC@10V
- Drain Source Voltage (Vdss): 800V
- Input Capacitance (Ciss@Vds): 255pF@100V
- Continuous Drain Current (Id): 4.5A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@100uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.6Ω@10V,2A
- Package: TO-252
- Manufacturer: STMicroelectronics
- Series: SuperMESH5™
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
- Vgs (Max): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number: STD6N
- detail: N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount DPAK