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STFI15N60M2-EP دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | STFI15N60M2-EP |
|---|---|
| حجم فایل | 66.784 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 15 |
دانلود دیتاشیت STFI15N60M2-EP |
دانلود دیتاشیت |
|---|
سایر مستندات
STF(I)15N60M2-EP 15 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STFI15N60M2-EP
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 25W
- Total Gate Charge (Qg@Vgs): 17nC@10V
- Drain Source Voltage (Vdss): 600V
- Input Capacitance (Ciss@Vds): 590pF@100V
- Continuous Drain Current (Id): 11A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 378mΩ@10V,5.5A
- Package: TO-281
- Manufacturer: STMicroelectronics
- Series: MDmesh™ M2
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 378mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAKFP (TO-281)
- Package / Case: TO-262-3 Full Pack, I²Pak
- Base Part Number: STFI15N
- detail: N-Channel 600V 11A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)