دیتاشیت STB75NF75T4

ST(B,P)75NF75(FP)

مشخصات دیتاشیت

نام دیتاشیت ST(B,P)75NF75(FP)
حجم فایل 428.446 کیلوبایت
نوع فایل pdf
تعداد صفحات 16

دانلود دیتاشیت ST(B,P)75NF75(FP)

ST(B,P)75NF75(FP) Datasheet

مشخصات

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STB75NF75T4
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 300W
  • Total Gate Charge (Qg@Vgs): 117nC@10V
  • Drain Source Voltage (Vdss): 75V
  • Input Capacitance (Ciss@Vds): 3.7nF@25V
  • Continuous Drain Current (Id): 80A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 240pF@25V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.5mΩ@10V,40A
  • Package: D2PAK
  • Manufacturer: STMicroelectronics
  • Series: STripFET™ II
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: STB75N
  • detail: N-Channel 75V 80A (Tc) 300W (Tc) Surface Mount D2PAK