STB75NF75T4
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| Manufacturer | STMicroelectronics |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | ST(B,P)75NF75(FP) |
| Description | N-Channel 75V 80A (Tc) 300W (Tc) Surface Mount D2PAK |
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مشخصات STB75NF75T4
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STB75NF75T4
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 300W
- Total Gate Charge (Qg@Vgs) 117nC@10V
- Drain Source Voltage (Vdss) 75V
- Input Capacitance (Ciss@Vds) 3.7nF@25V
- Continuous Drain Current (Id) 80A
- Gate Threshold Voltage (Vgs(th)@Id) 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 240pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 9.5mΩ@10V,40A
- Package D2PAK
- Manufacturer STMicroelectronics
- Series STripFET™ II
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 75V
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 11mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
- FET Feature -
- Power Dissipation (Max) 300W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package D2PAK
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number STB75N
- detail N-Channel 75V 80A (Tc) 300W (Tc) Surface Mount D2PAK
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