STB34NM60ND دیتاشیت

STx34NM60ND

مشخصات دیتاشیت

نام دیتاشیت STx34NM60ND
حجم فایل 328.27 کیلوبایت
نوع فایل pdf
تعداد صفحات 22

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مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Power Dissipation (Pd): 190W
  • Total Gate Charge (Qg@Vgs): 80.4nC@10V
  • Input Capacitance (Ciss@Vds): 2785pF@50V
  • Continuous Drain Current (Id): 29A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 110mΩ@14.5A,10V
  • Package: TO-263-3(D2PAK)
  • Manufacturer: STMicroelectronics
  • Series: FDmesh™ II
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80.4nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: STB34N
  • detail: N-Channel 600V 29A (Tc) 190W (Tc) Surface Mount D2PAK

محصولات مشابه