STW15NM60ND دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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STW15NM60ND
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حجم فایل
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76.169
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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19
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STW15NM60ND
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
125W
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Total Gate Charge (Qg@Vgs):
40nC@10V
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Input Capacitance (Ciss@Vds):
1250pF@50V
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Continuous Drain Current (Id):
14A
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Gate Threshold Voltage (Vgs(th)@Id):
5V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
299mΩ@7A,10V
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Package:
TO-247
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Manufacturer:
STMicroelectronics
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Series:
MDmesh™ II
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Packaging:
Tube
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Part Status:
Obsolete
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
600V
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Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
299mOhm @ 7A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
37nC @ 10V
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Vgs (Max):
±25V
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Input Capacitance (Ciss) (Max) @ Vds:
1250pF @ 50V
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FET Feature:
-
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Power Dissipation (Max):
125W (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-247-3
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Package / Case:
TO-247-3
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Base Part Number:
STW15N
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detail:
N-Channel 600V 14A (Tc) 125W (Tc) Through Hole TO-247-3
