STP15NM60ND
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| Manufacturer | STMicroelectronics |
| Package | TO-220-3 |
| Datasheet | STx15NM60N |
| Description | N-Channel 600V 14A (Tc) 125W (Tc) Through Hole TO-220AB |
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مشخصات STP15NM60ND
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STP15NM60ND
- Operating Temperature +150°C@(Tj)
- Power Dissipation (Pd) 125W
- Total Gate Charge (Qg@Vgs) 40nC@10V
- Drain Source Voltage (Vdss) 600V
- Input Capacitance (Ciss@Vds) 1.25nF@50V
- Continuous Drain Current (Id) 14A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 5pF@50V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 270mΩ@10V,7A
- Package TO-220
- Manufacturer STMicroelectronics
- Series MDmesh™ II
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 299mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 50V
- FET Feature -
- Power Dissipation (Max) 125W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Base Part Number STP15N
- detail N-Channel 600V 14A (Tc) 125W (Tc) Through Hole TO-220AB
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