CSD19532KTT Datasheet دیتاشیت

CSD19532KTT Datasheet

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نام دیتاشیت CSD19532KTT Datasheet
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CSD19532KTTT 13 pages

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  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD19532KTTT
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 250W
  • Total Gate Charge (Qg@Vgs): 57nC@10V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 5060pF@50V
  • Continuous Drain Current (Id): 200A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.2V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.6mΩ@90A,10V
  • Package: TO-263-3
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 250W (Tc)
  • Drain to Source Voltage (Vdss): 100V
  • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V
  • Vgs (Max): ±20V
  • FET Type: N-Channel
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
  • FET Feature: -
  • Input Capacitance (Ciss) (Max) @ Vds: 5060pF @ 50V
  • Packaging: Cut Tape (CT)
  • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
  • Part Status: Active
  • Series: NexFET™
  • Vgs(th) (Max) @ Id: 3.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
  • Supplier Device Package: DDPAK/TO-263-3
  • Mounting Type: Surface Mount
  • Base Part Number: CSD19532
  • detail: N-Channel 100V 200A (Ta) 250W (Tc) Surface Mount DDPAK/TO-263-3

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