CSD19532KTTT
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| Manufacturer | Texas Instruments |
| Package | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
| Datasheet | CSD19532KTT Datasheet |
| Description | N-Channel 100V 200A (Ta) 250W (Tc) Surface Mount DDPAK/TO-263-3 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Texas Instruments CSD19532KTTT
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 250W
- Total Gate Charge (Qg@Vgs) 57nC@10V
- Drain Source Voltage (Vdss) 100V
- Input Capacitance (Ciss@Vds) 5060pF@50V
- Continuous Drain Current (Id) 200A
- Gate Threshold Voltage (Vgs(th)@Id) 3.2V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 5.6mΩ@90A,10V
- Package TO-263-3
- Manufacturer Texas Instruments
- Power Dissipation (Max) 250W (Tc)
- Drain to Source Voltage (Vdss) 100V
- Rds On (Max) @ Id, Vgs 5.6mOhm @ 90A, 10V
- Vgs (Max) ±20V
- FET Type N-Channel
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Technology MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C 200A (Ta)
- FET Feature -
- Input Capacitance (Ciss) (Max) @ Vds 5060pF @ 50V
- Packaging Cut Tape (CT)
- Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
- Part Status Active
- Series NexFET™
- Vgs(th) (Max) @ Id 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
- Supplier Device Package DDPAK/TO-263-3
- Mounting Type Surface Mount
- Base Part Number CSD19532
- detail N-Channel 100V 200A (Ta) 250W (Tc) Surface Mount DDPAK/TO-263-3
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