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CSD19532KTTT دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | CSD19532KTTT |
|---|---|
| حجم فایل | 78.844 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 13 |
دانلود دیتاشیت CSD19532KTTT |
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سایر مستندات
CSD19532KTT Datasheet 12 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Texas Instruments CSD19532KTTT
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 250W
- Total Gate Charge (Qg@Vgs): 57nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 5060pF@50V
- Continuous Drain Current (Id): 200A
- Gate Threshold Voltage (Vgs(th)@Id): 3.2V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5.6mΩ@90A,10V
- Package: TO-263-3
- Manufacturer: Texas Instruments
- Power Dissipation (Max): 250W (Tc)
- Drain to Source Voltage (Vdss): 100V
- Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V
- Vgs (Max): ±20V
- FET Type: N-Channel
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Technology: MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
- FET Feature: -
- Input Capacitance (Ciss) (Max) @ Vds: 5060pF @ 50V
- Packaging: Cut Tape (CT)
- Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
- Part Status: Active
- Series: NexFET™
- Vgs(th) (Max) @ Id: 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Supplier Device Package: DDPAK/TO-263-3
- Mounting Type: Surface Mount
- Base Part Number: CSD19532
- detail: N-Channel 100V 200A (Ta) 250W (Tc) Surface Mount DDPAK/TO-263-3