دیتاشیت STF25N60M2-EP
مشخصات دیتاشیت
| نام دیتاشیت |
STF25N60M2-EP
|
| حجم فایل |
236.891
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
14
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STF25N60M2-EP
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
30W
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Total Gate Charge (Qg@Vgs):
29nC@10V
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Input Capacitance (Ciss@Vds):
1090pF@100V
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Continuous Drain Current (Id):
18A
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Gate Threshold Voltage (Vgs(th)@Id):
4.75V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
188mΩ@9A,10V
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Package:
TO-220F
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Manufacturer:
STMicroelectronics
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Series:
MDmesh™ M2-EP
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
600V
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Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
188mOhm @ 9A, 10V
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Vgs(th) (Max) @ Id:
4.75V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
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Vgs (Max):
±25V
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Input Capacitance (Ciss) (Max) @ Vds:
1090pF @ 100V
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FET Feature:
-
-
Power Dissipation (Max):
30W (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220FP
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Package / Case:
TO-220-3 Full Pack
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Base Part Number:
STF25
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detail:
N-Channel 600V 18A (Tc) 30W (Tc) Through Hole TO-220FP
