STF25N60M2-EP
در 0 فروشگاه قیمت هنوز مشخص نشده است
این محصول در حال حاضر فروشنده ای ندارد!
| Manufacturer | STMicroelectronics |
| Package | TO-220-3 Full Pack |
| Datasheet | STF25N60M2-EP |
| Description | N-Channel 600V 18A (Tc) 30W (Tc) Through Hole TO-220FP |
فروشنده های STF25N60M2-EP
فروشگاهی یافت نشد
مشخصات STF25N60M2-EP
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STF25N60M2-EP
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 30W
- Total Gate Charge (Qg@Vgs) 29nC@10V
- Input Capacitance (Ciss@Vds) 1090pF@100V
- Continuous Drain Current (Id) 18A
- Gate Threshold Voltage (Vgs(th)@Id) 4.75V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 188mΩ@9A,10V
- Package TO-220F
- Manufacturer STMicroelectronics
- Series MDmesh™ M2-EP
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 188mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 1090pF @ 100V
- FET Feature -
- Power Dissipation (Max) 30W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-220FP
- Package / Case TO-220-3 Full Pack
- Base Part Number STF25
- detail N-Channel 600V 18A (Tc) 30W (Tc) Through Hole TO-220FP
فروشنده های STF25N60M2-EP
فروشگاهی یافت نشد
