CSD23202W10T دیتاشیت

CSD23202W10T

مشخصات دیتاشیت

نام دیتاشیت CSD23202W10T
حجم فایل 81.792 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

مشاهده دیتاشیت CSD23202W10T

دانلود دیتاشیت

سایر مستندات

CSD23202W10 12 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD23202W10T
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1W
  • Total Gate Charge (Qg@Vgs): 3.8nC@4.5V
  • Drain Source Voltage (Vdss): 12V
  • Input Capacitance (Ciss@Vds): 512pF@6V
  • Continuous Drain Current (Id): 2.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 900mV@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 53mΩ@500mA,4.5V
  • Package: BGA-4
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 1W (Ta)
  • Drain to Source Voltage (Vdss): 12V
  • Rds On (Max) @ Id, Vgs: 53mOhm @ 500mA, 4.5V
  • Vgs (Max): -6V
  • FET Type: P-Channel
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • FET Feature: -
  • Input Capacitance (Ciss) (Max) @ Vds: 512pF @ 6V
  • Packaging: Cut Tape (CT)
  • Package / Case: 4-UFBGA, DSBGA
  • Part Status: Active
  • Series: NexFET™
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V
  • Supplier Device Package: 4-DSBGA (1x1)
  • Mounting Type: Surface Mount
  • Base Part Number: CSD232
  • detail: P-Channel 12V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)

محصولات مشابه