CSD23202W10T

CSD23202W10T

CSD23202W10T

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مشخصات فنی:
Manufacturer Texas Instruments
Package 4-UFBGA, DSBGA
Datasheet CSD23202W10
Description P-Channel 12V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)

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مشخصات

  • RoHS true
  • Type P Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet Texas Instruments CSD23202W10T
  • Operating Temperature -55°C~+150°C@(Tj)
  • Power Dissipation (Pd) 1W
  • Total Gate Charge (Qg@Vgs) 3.8nC@4.5V
  • Drain Source Voltage (Vdss) 12V
  • Input Capacitance (Ciss@Vds) 512pF@6V
  • Continuous Drain Current (Id) 2.2A
  • Gate Threshold Voltage (Vgs(th)@Id) 900mV@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 53mΩ@500mA,4.5V
  • Package BGA-4
  • Manufacturer Texas Instruments
  • Power Dissipation (Max) 1W (Ta)
  • Drain to Source Voltage (Vdss) 12V
  • Rds On (Max) @ Id, Vgs 53mOhm @ 500mA, 4.5V
  • Vgs (Max) -6V
  • FET Type P-Channel
  • Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
  • Technology MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
  • FET Feature -
  • Input Capacitance (Ciss) (Max) @ Vds 512pF @ 6V
  • Packaging Cut Tape (CT)
  • Package / Case 4-UFBGA, DSBGA
  • Part Status Active
  • Series NexFET™
  • Vgs(th) (Max) @ Id 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 4.5V
  • Supplier Device Package 4-DSBGA (1x1)
  • Mounting Type Surface Mount
  • Base Part Number CSD232
  • detail P-Channel 12V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)

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